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Laser Induced
Epitaxial Growth | LIEG
Laser Induced Epitaxial Growth | LIEG
Application
Laser-induced epitaxial growth
and void elimination of amorphous
silicon in ultra-small via with large
aspect ratio
Product Features
  • First domestic 12 inch mass production equipment

  • High precise beam combination technology and modulation technology for Multi- laser

  • Rectangular Top-hat beam with large size, high productivity

  • Energy density  accuracy down to 5mJ/cm2

ItemLA2250G
Laser wavelength532nm
Wafer size12 inch
Energy Density accuracy5mJ/cm2
Uniformity of beam top≤1%
Focal depth range5mm
Process EffectCrystallization and void elimination